235 band switching diodes ma2x073 (MA73) silicon epitaxial planar type for band switching features ? low forward dynamic resistance r f ? less voltage dependence of diode capacitance c d ? mini type package, allowing downsizing of equipment and automatic insertion through the taping package absolute maximum ratings t a = 25 c unit : mm parameter symbol rating unit reverse voltage (dc) v r 35 v forward current (dc) i f 100 ma operating ambient temperature * t opr ? 25 to + 85 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit reverse current (dc) i r v r = 33 v 0.01 100 na forward voltage (dc) v f i f = 100 ma 0.92 1 v diode capacitance c d v r = 6 v, f = 1 mhz 0.9 1.2 pf forward dynamic resistance * r f i f = 2 ma, f = 100 mhz 0.65 0.85 ? electrical characteristics t a = 25 c note) 1. rated input/output frequency: 100 mhz 2. * : r f measuring instrument: yhp model 4191a rf impedance analyzer marking symbol: 4b note) * : maximum ambient temperature during operation 1 : anode 2 : cathode mini2-g1 package 0.55 0.1 0.16 +0.10 0.03 (0.3) 5 5 1 +0.2 0.1 1.6 2 3.3 0.2 2.7 +0.2 0.1 1.10 +0.25 0.15 1.1 0.00 0.05 +0.2 0.1 (0.3) note) the part number in the parenthesis shows conventional part number. maintenance/ discontinued maintenance/discontinued includes following four product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type please visit following url about latest information. http://panasonic.net/sc/en
band switching diodes 236 ma2x073 i f v f r f f r f i f i r t a c d v r 10 1 0 0.2 0.4 0.6 0.8 1.0 1 10 10 2 10 3 forward voltage v f ( v ) forward current i f ( ma ) t a 25 c 0.1 10 1 0.2 2 0.3 3 0.5 5 0 8 16 24 32 4 1220283640 reverse voltage v r ( v ) diode capacitance c d ( pf ) f 1 mhz t a 25 c 10 2 0 40 80 120 160 20 60 100 140 10 1 1 10 10 2 ambient temperature t a ( c ) reverse current i r ( na ) v r 33 v 0 0.4 0.2 0.8 0.6 1.0 110 3 30 100 forward current i f ( ma ) forward dynamic resistance r f ( ) f 100 mhz t a 25 c 0 0.4 0.2 0.8 0.6 1.0 10 100 30 300 1 000 frequency f ( mhz ) forward dynamic resistance r f ( ) i f 2 ma t a 25 c
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